BD825 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BD825

NPN power transistors

Philips Electronics 

Philips Semiconductors

NPN power transistors

Product specification

BD825; BD829

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

BD825

BD829

collector-emitter voltage

BD825

BD829

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C

Tmb ≤ 50 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

Rth j-mb

thermal resistance from junction to ambient

in free air

thermal resistance from junction to mounting base

MIN. MAX. UNIT

−

45

V

−

100

V

−

45

V

−

80

V

−

5

V

−

1

A

−

1.5

A

−

500

mA

−

2

W

−

8

W

−65

+150 °C

−

150

°C

−65

+150 °C

VALUE

62.5

12.5

UNIT

K/W

K/W

1998 May 29

3

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