STP105N3LL Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STP105N3LL

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

STMicroelectronics 

STP105N3LL

Electrical characteristics

Symbol

Table 7. Source drain diode

Parameter

Test conditions

ISD

(1)

ISDM

(2)

VSD

trr

Qrr

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

IRRM Reverse recovery current

ISD = 40 A, VGS = 0

ISD = 80 A,

di/dt = 100 A/μs,

VDD = 24 V

Figure 15

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Min. Typ. Max. Unit

-

80 A

-

320 A

-

1.1 V

- 28.6

ns

- 22.8

nC

- 1.6

A

DocID023976 Rev 2

5/13

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