STP105N3LL Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STP105N3LL

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

STMicroelectronics 

STP105N3LL

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™

Power MOSFET in a TO-220 package

Datasheet − production data

Features

TAB

3

2

1

TO-220

Order code

STP105N3LL

VDS

30 V

RDS(on) max. ID

3.5 mΩ 150 A

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

Figure 1. Internal schematic diagram

'Ć7$%

*

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

th

developed using the 6 generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

6

$0Y

Order code

STP105N3LL

Table 1. Device summary

Marking

Packages

105N3LL

TO-220

Packaging

Tube

April 2014

This is information on a product in full production.

DocID023976 Rev 2

1/13

www.st.com

Share Link: