STP105N3LL Ver la hoja de datos (PDF) - STMicroelectronics
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Fabricante
STP105N3LL
STMicroelectronics
STP105N3LL Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STP105N3LL
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. Static
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS Voltage
ID = 250 μA, VGS= 0
30
Zero gate voltage drain
IDSS current (VGS = 0)
VDS = 30 V
VDS = 30 V, Tc = 125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 μA
1
Static drain-source on-
RDS(on)
resistance
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 40 A
V
1 μA
10 μA
±100 nA
2.5 V
2.7
3.5 mΩ
3.5
4.5 mΩ
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Rg Gate input resistance
Table 5. Dynamic
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
Min Typ. Max. Unit
- 3500 - pF
-
400
- pF
-
380
- pF
VDD = 15 V, ID = 80 A
VGS = 4.5 V
Figure 14
-
42
- nC
-
9
- nC
-
18
- nC
f = 1 MHz, gate DC
Bias = 0,
-
1
-
Ω
test signal level = 20 mV,
ID = 0
Symbol
Table 6. Switching on/off (inductive load)
Parameter
Test conditions
Min. Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 19
-
ns
VDD = 15 V, ID = 40 A,
- 91
-
ns
RG = 4.7 Ω, VGS = 5 V
Figure 13
- 24.5 -
ns
- 23.4 -
ns
4/13
DocID023976 Rev 2
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