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2SB649AM Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd

Número de pieza
componentes Descripción
Fabricante
2SB649AM Datasheet PDF : 4 Pages
1 2 3 4
SEMICONDUCTOR
2SB649AM Series RRooHHSS
Nell High Power Products
Bipolar General Purpose PNP Power Transistor
-1.5A / -120V, -160V / 20W
3 (B)
2 (C)
1(E)
TO-126
APPLICATIONS
Low frequency power amplifier complementary
pair with 2SD669AM/2SD669AM-A
8.0±0.5
Ø3.1
+0.15
- 0.1
120º
1.1
2.7± 0.4
0.8
2.29±0.5
2.29±0.5
0.55
1.2
ECB
B
All dimensions in millimeters
C
E PNP
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC(peak)
IC
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC= 25°C
TA= 25°C
VALUE
2SB649AM 2SB649AM-A
-180
-180
-120
-160
-5
-3
-1.5
20
1
150
-55 to 150
UNIT
V
A
W
ºC
www.nellsemi.com
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