2SB649AM Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd

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componentes Descripción

Fabricante

2SB649AM

Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W

Nell Semiconductor Co., Ltd 

SEMICONDUCTOR

2SB649AM Series RRooHHSS

Nell High Power Products

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector to base breakdown voltage IC = -1mA, lE = 0

min typ max

-180

V(BR)CEO Collector to emitter breakdown voltage IC = -10mA, RBE = ∞

2SB649AM -120

2SB649AM-A -160

V(BR)EBO Emitter to base breakdown voltage

IE = -1mA, IC = 0

-5

ICBO

Collector cutoff current

VCB = -160V, IE = 0

-10

2SB649AM

60

320

hFE1

VCE = -5V, lC = -150 mA

DC current transfer ratio (Note1)

2SB649AM-A 60

200

hFE2

VCE = -5V, lC = -500 mA

30

VCE(sat) Collector to emitter saturation voltage lC = -0.5A, lB = -50mA

-1.0

VBE

Base to emitter voltage

Transition frequency

fT

( gain bandwidth product)

VCE = -5V, lC = -150mA

VCE = -5V, lC = -150 mA

-1.5

140

Cob

Collector output capacitance

VCB = -10V, lE = 0, ftest=1MHz

27

Note: 1. Pulse test.

UNIT

V

µA

V

MHz

pF

CLASSIFICATION OF hFE1

RANK

B

C

2SD669AM

60 to 120

100 to 200

2SD669AM-A 60 to 120

100 to 200

D

160 to 320

Fig.1 Maximum collector dissipation curve

30

20

10

0

0

50

100

150

Case temperature, TC (°C)

Fig.2 Area of safe operation

-3

-1.0

-0.3

(-13.3V, -1.5A)

(-40V, -0.5A)

DC Operation (TC = 25°C)

-0.1

-0.03

(-120V, -0.04A)

(-160V, -0.02A)

2SB649AM

2SB649AM-A

-0.01

-1

-3

-10 -30 -100 -300

Collector to emitter voltage, VCE (V)

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