BSM50GD120DN2G Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

BSM50GD120DN2G

IGBT Power Module

Siemens AG 

BSM 50 GD 120 DN2G

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

V

VGE = VCE, IC = 2 mA

4.5

5.5

6.5

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 50 A, Tj = 25 °C

-

2.5

3

VGE = 15 V, IC = 50 A, Tj = 125 °C

-

3.1

3.7

Zero gate voltage collector current

ICES

mA

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

-

0.8

1

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

-

4

-

Gate-emitter leakage current

IGES

nA

VGE = 20 V, VCE = 0 V

-

-

200

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 50 A

23

-

-

Input capacitance

Ciss

pF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

3300 -

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

500

-

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

220

-

Semiconductor Group

2

Aug-23-1996

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