BSM50GD120DN2G Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BSM50GD120DN2G Datasheet PDF : 9 Pages
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BSM 50 GD 120 DN2G
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
450
W
Ptot 350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
75
A
65
IC
60
55
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
A
IC 10 2
tp = 14.0µs
10 1
100 µs
1 ms
10 0
10 ms
10 -1
10 0
10 1
DC
10 2
10 3
V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
ZthJC 10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
4
Aug-23-1996
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