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PESD5V0U5BF Ver la hoja de datos (PDF) - NXP Semiconductors.

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PESD5V0U5BF Datasheet PDF : 12 Pages
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NXP Semiconductors
PESD5V0U5BF; PESD5V0U5BV
Ultra low capacitance bidirectional fivefold ESD protection arrays
4. Marking
Table 5. Marking codes
Type number
PESD5V0U5BF
PESD5V0U5BV
Marking code
B2
G7
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Tj
junction temperature
-
Tamb
ambient temperature
55
Tstg
storage temperature
65
Max Unit
150
°C
+150 °C
+150 °C
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Min Max Unit
[1][2]
-
-
10 kV
8
kV
PESD5V0U5BF_PESD5V0U5BV_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
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