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PESD5V0U5BF Datasheet PDF : 12 Pages
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NXP Semiconductors
PESD5V0U5BF; PESD5V0U5BV
Ultra low capacitance bidirectional fivefold ESD protection arrays
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff
voltage
IRM
reverse leakage current VRWM = 5 V
VBR
breakdown voltage
IR = 5 mA
Cd
diode capacitance
f = 1 MHz
VR = 0 V
VR = 5 V
rdif
differential resistance IR = 1 mA
Min Typ Max Unit
-
-
5
V
-
5
100 nA
5.5 6.5 9.5 V
-
2.9 3.5 pF
-
1.9 -
pF
-
-
100 Ω
3.0
Cd
(pF)
2.6
006aab036
2.2
1.8
0
1
2
3
4
5
VR (V)
Fig 2.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
+
006aaa676
Fig 3. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U5BF_PESD5V0U5BV_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
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