IGW25N120H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
recommended in combination with SiC Diode IDH15S120
Features:
TRENCHSTOPTM technology offering
• best in class switching performance: less than 500µJ total
switching losses achievable
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
• solar inverters
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
C
G
E
Key Performance and Package Parameters
Type
V†Š
I† V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà
IGW25N120H3
1200V 25A
2.05V
175°C
Marking
G25N120H3
Package
PG-TO247-3
2
Rev. 1.1, 2011-01-25