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IGW25N120H3

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

High speed switching series third generation

Switching Characteristic, Inductive Load, aattTTvÝjÎ == 117755°°CC/ 125°C

Parameter

Symbol Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

tÁñÓÒò TÝÎ = 175°C,

tØ

V†† = 600V, I† = 25.0A,

V•Š = 0.0/15.0V,

tÁñÓËËò r• = 23.0Â, Lÿ = 80nH,

tË

Cÿ = 67pF

Lÿ, Cÿ from Fig. E

EÓÒ

Energy losses include “tail” and

diode (IKW25N120H3) reverse

EÓËË

recovery.

EÚÙ

Turn-on energy

Turn-off energy

Total switching energy

EÓÒ

TÝÎ = 1725°C,

EÓËË

V†† = 800V, I† = 10.0A,

V•Š = 0.0/15.0V,

EÚÙ

r• = 3.0Â, Lÿ = 80nH,

Cÿ = 67pF

Lÿ, Cÿ from Fig. E

Energy losses include “tail” and

diode (IDH15S120) reverse

recovery.

Value

Unit

min. typ. max.

-

26

- ns

-

35

- ns

- 347 - ns

-

50

- ns

- 2.60 - mJ

- 1.70 - mJ

- 4.30 - mJ

- 0.10 - mJ

- 0.62 - mJ

- 0.72 - mJ

6

Rev. 1.1, 2011-01-25

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