G25N120H3(2014) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

G25N120H3
(Rev.:2014)

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

Highspeedswitchingseriesthirdgeneration

HighspeedIGBTinTrenchandFieldstoptechnology

recommendedincombinationwithSiCDiodeIDH15S120



Features:

C

TRENCHSTOPTMtechnologyoffering

•bestinclassswitchingperformance:lessthan500µJtotal

switchinglossesachievable

•verylowVCEsat

•lowEMI

•maximumjunctiontemperature175°C

•qualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating;RoHScompliant

•completeproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

G

E

Applications:

•solarinverters

•uninterruptiblepowersupplies

•weldingconverters

•converterswithhighswitchingfrequency

Packagepindefinition:

1

2

3

•Pin1-gate

•Pin2&backside-collector

•Pin3-emitter

KeyPerformanceandPackageParameters

Type

VCE

IC

VCEsat,Tvj=25°C

IGW25N120H3

1200V 25A

2.05V

Tvjmax

175°C

Marking

G25H1203

Package

PG-TO247-3

2

Rev.2.1,2014-02-27

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