G25N120H3(2014) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

G25N120H3
(Rev.:2014)

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

Highspeedswitchingseriesthirdgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

Symbol Conditions

DynamicCharacteristic

Input capacitance

Cies

Output capacitance

Coes

Reverse transfer capacitance

Cres

Gate charge

QG

Short circuit collector current

Max. 1000 short circuits

IC(SC)

Time between short circuits: ≥ 1.0s

VCE=25V,VGE=0V,f=1MHz

VCC=960V,IC=25.0A,

VGE=15V

VGE=15.0V,VCC≤600V,

tSC≤10µs

Tvj=175°C

Value

Unit

min. typ. max.

- 1430 -

-

95

- pF

-

75

-

- 115.0 - nC

-

-A

87

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=25°C,

VCC=600V,IC=25.0A,

VGE=0.0/15.0V,

rG=23.0Ω,Lσ=80nH,

Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode (IKW25N120H3) reverse

recovery.

Tvj=25°C,

VCC=800V,IC=10.0A,

VGE=0.0/15.0V,

rG=3.0Ω,Lσ=80nH,

Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode (IDH15S120) reverse

recovery.

Value

Unit

min. typ. max.

-

27

- ns

-

41

- ns

- 277 - ns

-

17

- ns

- 1.80 - mJ

- 0.85 - mJ

- 2.65 - mJ

- 0.08 - mJ

- 0.27 - mJ

- 0.35 - mJ

5

Rev.2.1,2014-02-27

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