IXTH16N50D2(2017) Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXTH16N50D2
(Rev.:2017)

Depletion Mode MOSFET

IXYS CORPORATION 

Fig. 7. Normalized RDS(on) vs. Junction Temperature

2.5

VGS = 0V

I D = 8A

2.0

1.5

1.0

0.5

-50

-25

0

25

50

75

100

125

150

TJ - Degrees Centigrade

IXTH16N50D2

IXTT16N50D2

Fig. 8. RDS(on) Normalized to ID = 8A Value

vs. Drain Current

4

3.5

VGS = 0V

5V

3

2.5

TJ = 125oC

2

1.5

1

0.5

TJ = 25oC

0

0

5

10 15 20 25 30 35 40 45 50

ID - Amperes

50

VDS = 30V

40

Fig. 9. Input Admittance

30

TJ = 125oC

25oC

20

- 40oC

10

30

VDS = 30V

25

Fig. 10. Transconductance

TJ = - 40oC, 25oC, 125oC

20

15

10

5

0

-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5

0.0

0.5

1.0

VGS - Volts

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

1.3

1.2

VGS(off) @ VDS = 25V

1.1

BVDSX @ VGS = - 5V

1.0

0.9

0

0

5

10 15 20 25 30 35 40 45 50

ID - Amperes

Fig. 12. Forward Voltage Drop of Intrinsic Diode

30

VGS = -10V

25

20

15

TJ = 125oC

10

TJ = 25oC

5

0.8

-50

-25

0

25

50

75

100

125

150

TJ - Degrees Centigrade

0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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