IXTH16N50D2
IXTT16N50D2
100,000
f = 1 MHz
10,000
Fig. 13. Capacitance
Ciss
1,000
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
VDS = 250V
I D = 8A
I G = 10mA
20 40
Fig. 14. Gate Charge
60 80 100 120 140 160 180 200
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25oC
100
RDS(on) Limit
25μs
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75oC
100
RDS(on) Limit
100μs
25μs
10
10
100μs
1ms
1ms
10ms
101.000
TJ = 150oC
TC = 25oC
Single Pulse
0.1
10
1.000
100
VDS - Volts
100ms
1
Fig. 17D.CMaximum Transient Thermal Impedance
TJ = 150oC
TC = 75oC
Single Pulse
1,000
0.1
10
100
VDS - Volts
10ms
100ms
DC
1,000
Fig. 17. Maximum Transient Thermal Impedance
hvjv
0.300
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
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IXYS REF: T_16N50D2(8C)4-08-10