IXTH16N50D2(2017) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH16N50D2 Datasheet PDF : 6 Pages
| |||
Depletion Mode
MOSFET
N-Channel
IXTH16N50D2
IXTT16N50D2
D
G
S
Symbol
VDSX
VDGX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
500
V
500
V
20
V
30
V
695
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250A
VGS(off)
VDS = 25V, ID = 4mA
IGSX
VGS = 20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS = - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 8A, Note 1
VGS = 0V, VDS = 25V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
500
V
- 2.0
- 4.0 V
100 nA
10 A
150 A
300 m
16
A
VDSX =
ID(on) >
RDS(on)
500V
16A
300m
TO-247 (IXTH)
G
DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2017 IXYS CORPORATION, All Rights Reserved
DS100261C(4/17)
Share Link: 