STPS40SM80CG-TR Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS40SM80CG-TR Datasheet PDF : 11 Pages
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STPS40SM80C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 10 A
IF = 20 A
IF = 40 A
-
15
50
µA
-
10
30
mA
-
0.590 0.655
-
0.520 0.560
-
0.720 0.800
V
-
0.605 0.690
-
0.875 0.985
-
0.725 0.850
To evaluate the conduction losses use the following equation:
P = 0.53 x IF(AV) + 0.008 x IF2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
20 PF(AV)(W)
T
18
δ = 0.5 δ = 1
16 δ = tp / T
14
12
10
tp
δ = 0.1
δ = 0.05
δ = 0.2
8
6
4
2
IF(AV)(A)
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
24 IF(AV)(A)
22
Rth(j-a) = Rth(j-c)
20
18
16
TO-220AB / I2PAK / D2PAK
14
12
TO-220FPAB
10
8
6
4
2
0
Tamb(°C)
0
25
50
75
100 125 150 175
Figure 4. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Doc ID 018719 Rev 1
3/11
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