STPS40SM80CG-TR Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STPS40SM80CG-TR

Power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS40SM80C

Table 2.

Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless

otherwise specified)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

80

V

IF(RMS) Forward rms current

30

A

TO-220AB, Tc = 145 °C Per diode

20

IF(AV)

Average forward current,

δ = 0.5

I2PAK, D2PAK Tc = 145 °C Per device

40

A

TO-220FPAB Tc = 90 °C Per diode

20

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

Tc = 25 °C

200

A

PARM(1) Repetitive peak avalanche power

Tj = 25 °C, tp = 1 µs

9500

W

VARM(2)

Maximum repetitive peak

avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 28.5 A

100

V

VASM(2)

Maximum single pulse

peak avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 28.5 A

100

V

Tstg Storage temperature range

Tj Maximum operating junction temperature(3)

-65 to +175 °C

175

°C

1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

2. See Figure 13

3.

dPtot

dTj

<1

Rth(j-a)

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c) Junction to case

Rth(c) Coupling

TO-220AB

I2PAK, D2PAK

TO-220FPAB

TO-220AB

I2PAK, D2PAK

TO-220FPAB

per diode

total

per diode

total

1.60

0.88

4.90

4.00

0.15

3.10

°C/W

°C/W

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

2/11

Doc ID 018719 Rev 1

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