STD10P6F6(2012) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD10P6F6
(Rev.:2012)

P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

STD10P6F6, STP10P6F6

Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 48 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

Figure 2

Min. Typ.

7.5

-

7

16.5

-

10

Max. Unit

ns

-

ns

ns

-

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, VGS = 0

ISD = 10 A,

di/dt = 100 A/µs,

VDD = 48 V

Figure 4

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

10 A

-

40 A

-

1.1 V

28

ns

-

28

nC

2

A

Warning: For the P-channel Power MOSFET the actual polarity of the

voltages and the current must be reversed.

Doc ID 022967 Rev 2

5/15

Share Link: