STD10P6F6(2012) Ver la hoja de datos (PDF) - STMicroelectronics

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STD10P6F6
(Rev.:2012)

P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

STD10P6F6, STP10P6F6

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID (1)

ID

IDM (2)

PTOT

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

Tstg Storage temperature

Tj

Max. operating junction temperature

1. Limited by wire bonding

2. Pulse width limited by safe operating area

Value

60

± 20

10

7.2

40

35

0.23

-55 to 175

175

Unit

V

V

A

A

A

W

W/°C

°C

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering purpose

Value

DPAK TO-220

4.29

100

62.5

275

300

Unit

°C/W

°C/W

°C

Warning: For the P-channel Power MOSFET the actual polarity of the

voltages and the current must be reversed.

Doc ID 022967 Rev 2

3/15

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