STD10P6F6(2012) Ver la hoja de datos (PDF) - STMicroelectronics

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STD10P6F6
(Rev.:2012)

P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

STD10P6F6,

STP10P6F6

P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™

Power MOSFET in DPAK and TO-220 packages

Datasheet — preliminary data

Features

Order codes

STD10P6F6

STP10P6F6

VDSS

60 V

60 V

RDS(on) max

0.18 Ω

0.18 Ω

ID

10 A

10 A

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

Applications

■ Switching applications

Description

These devices are P-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest RDS(on) in all packages.

3

1

DPAK

3

2

1

TO-220

Figure 1. Internal schematic diagram

AM11258v1

Table 1. Device summary

Order codes

STD10P6F6

STP10P6F6

Marking

10P6F6

10P6F6

Package

DPAK

TO-220

Packaging

Tape and reel

Tube

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

June 2012

Doc ID 022967 Rev 2

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

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