STPS2H100U Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS2H100U Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
STPS2H100
Table 2. Absolute ratings (limiting values -Tamb = 25° C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
SMA / SMB TL = 130 °C = 0.5
IF(AV) Average forward current
SMAflat
TL = 145 °C = 0.5
SMBflat
TL = 150 °C = 0.5
IFSM Surge non repetitive forward current
tp =10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
100
V
2
A
75
A
2400
W
-65 to + 175 °C
175
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
SMA
30
Rth(j-l) Junction to lead
SMAflat
SMB
SMBflat
20
°C/W
25
15
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 2 A
IF = 4 A
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.56 x IF(AV) + 0.045 IF2(RMS)
1
µA
0.4
1
mA
0.79
0.6
0.65
V
0.88
0.69 0.74
2/12
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