STPS2H100U Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STPS2H100U

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS2H100

Figure 7. Relative variation of thermal

impedance junction to ambient versus pulse

duration (SMA)

Zth(j-a)/Rth(j-a)

1.0

SMA

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1 Single pulse

0.0

1.E-02

1.E-01

tp(s)

1.E+00

1.E+01

1.E+02

1.E+03

Figure 8. Relative variation of thermal

impedance junction to lead versus pulse

duration (SMAflat)

1.0 Zth(j-l)/Rth(j-l)

0.9

SMAflat

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-04

1.E-03

1.E-02

1.E-01

tp(s)

1.E+00

1.E+01

Figure 9. Relative variation of thermal

impedance junction to ambient versus pulse

duration (SMB)

Zth(j-a)/Rth(j-a)

1.0

SMB

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1 Single pulse

0.0

1.E-02

1.E-01

tp(s)

1.E+00

1.E+01

1.E+02

1.E+03

Figure 10. Relative variation of thermal

impedance junction to lead versus pulse

duration (SMBflat)

Zth(j-l)/Rth(j-l)

1.0

SMBflat

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1 Single pulse

0.0

1.E-04

1.E-03

tp(s)

1.E-02

1.E-01

1.E+00

1.E+01

Figure 11. Reverse leakage current versus

reverse voltage applied (typical values)

1.E+04 IR(µA)

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

0

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

20

40

60

80

100

Figure 12. Junction capacitance versus reverse

voltage applied (typical values)

C(pF)

100

F=1MHz

VOSC=30mVRMS

Tj=25°C

10

1

VR(V)

10

100

4/12

DocID6115 Rev 8

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