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Fabricante

MX28F1000P

1M-BIT [128K x 8] CMOS FLASH MEMORY

Macronix International 

MX28F1000P

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION

DC CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

TYP

MAX.

UNIT

ILI

Input Leakage Current

10

uA

ILO

Output Leakage Current

10

uA

ISB1

Standby VCC current

1

mA

ISB2

1

100

uA

ICC1 (Read)

Operating VCC Current

30

mA

ICC2

50

mA

ICC3 (Program)

50

mA

ICC4 (Erase)

50

mA

ICC5 (Program Verify)

50

mA

ICC6 (Erase Verify)

50

mA

IPP1 (Read)

VPP Current

100

uA

IPP2 (Program)

50

mA

IPP3 (Erase)

50

mA

IPP4 (Program Verify)

50

mA

IPP5 (Erase Verify)

50

mA

VIL

Input Voltage

-0.3 (Note 5)

0.8

V

VIH

2.4

VCC+0.3V V

(Note 6)

VOL

Output Voltage

0.45

V

VOH

2.4

V

CONDITIONS

VIN=GND to VCC

VOUT=GND to VCC

CE=VIH

CE=VCC ± 0.3V

IOUT=0mA, f=1MHz

IOUT=0mA, F=11MHz

In Programming

In Erase

In Program Verify

In Erase Verify

VPP=12.6V

In Programming

In Erase

In Program Verify

In Erase Verify

IOL=2.1mA

IOH=-400uA

NOTES:

1. VCC must be applied before VPP and removed after VPP.

2. VPP must not exceed 14V including overshoot.

3. An influence may be had upon device reliability if the device

is installed or removed while VPP=12V.

4. Do not alter VPP either VIL to 12V or 12V to VIL when

CE=VIL.

5. VIL min. = -0.6V for pulse width < 20ns.

6. If VIH is over the specified maximum value, programming

operation cannot be guranteed.

7. All currents are in RMS unless otherwise noted.(Sampled, not

100% tested.)

8. For 28F1000P-70, Vcc = 5V ±5%, CL = 35pF; for 28F1000P-

90/12, Vcc = 5V ± 10%, CL = 100pF.

P/N: PM0340

REV. 1.6, JAN. 19, 1999

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