MPSA43 Ver la hoja de datos (PDF) - Diotec Semiconductor Germany
Número de pieza
componentes Descripción
Fabricante
MPSA43 Datasheet PDF : 2 Pages
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MPSA42 / MPSA43
MPSA42 / MPSA43
NPN
High voltage Si-epitaxial planar transistors
Hochspannungs-Si-Epitaxial Planar-Transistoren
Version 2005-06-17
Power dissipation
Verlustleistung
Plastic case
E BC
Kunststoffgehäuse
Weight approx.
Gewicht ca.
2 x 2.54
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße [mm]
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO
Collector-Base-voltage - Kollektor-Basis-Spannung
E open VCBO
Emitter-Base-voltage - Emitter-Basis-Spannung
C open VEBO
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Base current – Basisstrom
IB
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
MPSA42
MPSA43
300 V
200 V
300 V
200 V
6V
625 mW 1)
500 mA
100 mA
-65...+150°C
-65…+150°C
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
IE = 0, VCB = 160 V
MPSA42
MPSA43
Emitter-Base cutoff current – Emitterreststrom
IB = 0, VEB = 6 V
IB = 0, VEB = 4 V
MPSA42
MPSA43
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 20 mA, IB = 2 mA
MPSA42
MPSA43
ICB0
ICB0
IEB0
IEB0
VCEsat
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
100 nA
–
–
100 nA
–
–
100 nA
–
–
100 nA
–
–
500 mV
–
–
400 mV
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case
Gültig, wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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