MPSA43 Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

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componentes Descripción

Fabricante

MPSA43

High voltage Si-epitaxial planar transistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 20 mA, IB = 2 mA

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 10 V, IC = 1 mA

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 30 mA

Gain-Bandwidth Product – Transitfrequenz

VCE = 20 V, IC = 10 mA, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 20 V, IE = ie = 0, f = 1 MHz

MPSA42

MPSA43

Thermal resistance junction – ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

MPSA42 / MPSA43

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

VBEsat

–

–

0.9 V

hFE

25

–

–

hFE

40

–

–

hFE

40

–

–

fT

50 MHz

–

–

CCB0

–

CCB0

–

–

3 pF

–

4 pF

RthA

< 200 K/W 2)

MPSA92, MPSA93

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case

Gültig, wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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