EC103D1 Ver la hoja de datos (PDF) - Philips Electronics
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EC103D1 Datasheet PDF : 11 Pages
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Philips Semiconductors
EC103D1
Sensitive gate thyristor
3.0
IT
(A)
2.0
1.0
0
0.4
003aaa109
125 οC max
125 οC typ
25 οC typ
0.8
1.2 VT (V) 1.6
Fig 6. On-state current as a function of on-state
voltage; typical and maximum values.
2.0
a
1.6
003aaa114
1.2
0.8
0.4
0
-50
0
50
100
150
Tj (οC)
a = ---I---L---(--T--j--)--
I
L ( 25 °C )
Fig 7. Normalized latching current as a function of
junction temperature; typical values.
1.6
a
003aaa112
2.0
a
1.6
003aaa113
1.2
1.2
0.8
0.8
0.4
0.4
-50
0
50
100
150
Tj (οC)
0
-50
0
50
100
150
Tj (οC)
a = ---V-----G---T---(--T---j--)--
V
GT (25°C)
Fig 8. Normalized gate trigger voltage as a function of
junction temperature; typical values.
a = ---I---G---T----(-T---j--)--
I
GT (25°C)
Fig 9. Normalized gate trigger current as a function of
junction temperature; typical values.
9397 750 08574
Product data
Rev. 01 — 1 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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