EC103D1 Ver la hoja de datos (PDF) - Philips Electronics
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EC103D1 Datasheet PDF : 11 Pages
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Philips Semiconductors
EC103D1
Sensitive gate thyristor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; gate open
circuit
-
3
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
IR
reverse current
Dynamic characteristics
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
-
2
-
2
IT = 1.0 A
IT = 10 mA; gate open circuit
VD = 12 V
VD = VDRM (max); Tj = 125 °C
VD = VDRM (max); VR = VRRM (max);
Tj = 125 °C; RGK = 1 kΩ
-
1.2
-
0.5
0.2
0.3
-
50
-
50
dVD/dt rate of rise of off-state
VD = 0.67 VDRM(max); Tcase = 125 °C;
-
25
voltage
exponential waveform; RGK = 1 kΩ
tgt
gate controlled turn-on
ITM = 2.0 A; VD = VDRM(max);
time
IG = 10 mA; dIG/dt = 0.1 A /µs
-
2
tq
commutated turn-off time VD = 0.67 VDRM(max); Tj = 125 °C;
-
100
ITM = 1.6 A; VR = 35 V;
dITM/dt = 30 A /µs; dVD/dt = 2 V/µs;
RGK = 1 kΩ
Max
Unit
12
µA
6
mA
5
mA
1.35
V
0.8
V
-
V
100
µA
100
µA
-
V/µs
-
µs
-
µs
9397 750 08574
Product data
Rev. 01 — 1 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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