2SB1188(2005) Ver la hoja de datos (PDF) - Unisonic Technologies

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2SB1188
(Rev.:2005)

MEDIUM POWER LOW VOLTAGE TRANSISTOR

Unisonic Technologies 

2SB1188

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

Collector -Base Voltage

VCBO

-40

Collector -Emitter Voltage

VCEO

-30

Emitter -Base Voltage

VEBO

-5

Peak Collector Current

ICM

-7

DC Collector Current

IC

-3

Base Current

IB

-0.6

Power Dissipation

PD

0.5

Junction Temperature

TJ

+150

Storage Temperature

TSTG

-40 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

UNIT

V

V

V

A

A

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Cut-Off Current

ICBO VCB=-30V,IE=0

Emitter Cut-Off Current

IEBO VEB=-3V,Ic=0

DC Current Gain(Note 1)

hFE1 VCE=-2V,Ic=-20mA

hFE2 VCE=-2V,Ic=-1A

Collector-Emitter Saturation Voltage VCE(SAT) Ic=-2A,IB=-0.2A

Base-Emitter Saturation Voltage

VBE(SAT) Ic=-2A,IB=-0.2A

Current Gain Bandwidth Product

fT VCE=-5V,Ic=-0.1A

Output Capacitance

Cob VCB=-10V,IE=0,f=1MHz

Note 1: Pulse test: PW<300µs, Duty Cycle<2%

CLASSIFICATION OF hFE2

RANK

RANGE

Q

100 ~ 200

P

160 ~ 320

MIN TYP MAX UNIT

-1000 nA

-1000 nA

30 200

100 150 400

-0.3 -0.5

V

-1.0 -2.0

V

80

MHz

45

pF

E

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R208-041,A

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