2SB1188(2005) Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
2SB1188 Datasheet PDF : 4 Pages
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2SB1188
■ TYPICAL CHARACTERICS
Fig.1 Static characteristics
1.6
-IB=9mA
-IB=8mA
-IB=7mA
1.2
-IB=6mA
-IB=5mA
0.8
-IB=4mA
-IB=3mA
0.4
-IB=2mA
0
0
4
-IB=1mA
8
12
16
20
-Collector-Emitter voltage (V)
Fig.3 Power Derating
12
8
4
0
-50
0
50
100
150
200
Case Temperature, Tc (℃)
Fig.5 Current gain -
bandwidth product
103
VCE=5V
102
IB=8mA
101
PNP SILICON TRANSISTOR
Fig.2 Derating curve of safe
operating areas
150
100
S/b limited
50
0
-50
0
50
100
150
200
Case Temperature, Tc (℃)
Fig.4 Collector Output
capacitance
103
IE=0
f=1MHz
102
101
100
10 0
10-1
10-2
10-3
-Collector-Base Voltage(v)
Fig.6 Safe Operating Area
101 Ic(max),Pulse
Ic(max),DC 10mS
1mS
0.1 mS
10 0
10-1
100
10-2
10-1
10 0
101
Collector current, Ic (A)
10-2
10 0
10 1
102
Collector-Emitter Voltage
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R208-041,A
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