DG408BP45 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG408BP45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep

Auxiliary cathode

Gate

20°

Ø51 nom

Ø38 nom

Cathode

Ø38 nom

Ø56 max

Ø57.5 max

Ø63.5 max

Anode

Nominal weight: 350g

Clamping force: 12kN ±10%

Lead coaxial, length: 600mm

Package outine type code: P

ASSOCIATED PUBLICATIONS

Title

Calculating the junction temperature or power semiconductors

GTO gate drive units

Recommendations for clamping power semiconductors

Use of V , r on-state characteristic

TO T

Impoved gate drive for GTO series connections

Application Note

Number

AN4506

AN4571

AN4839

AN5001

AN5177

18/19

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