DG408BP45 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DG408BP45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

2.00

1.75

Conditions:

CS = 1.0µF,

IT = 1000A

1.50

Tj = 125°C

1.25

1.00

10

Tj = 25°C

20

30

40

50

60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.23 Gate fall time vs rate of rise of reverse gate current

500

Conditions:

CS = 1.0µF,

dIGQ/dt = 30A/µs

400

300

Tj = 125°C

Tj = 25°C

200

100

0

250

500

750

1000

1250

Turn-off current IT - (A)

Fig.24 Peak reverse gate current vs turn-off current

1500

14/19

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