DG408BP45 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG408BP45 Datasheet PDF : 19 Pages
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500
Conditions:
CS = 1.0µF,
IT = 1000A
450
400
DG408BP45
Tj = 125°C
Tj = 25°C
350
300
250
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
4000
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
3000
Tj = 125°C
2000
Tj = 25°C
1000
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
Fig.26 Turn-off gate charge vs on-state current
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