SI4136DY-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4136DY-T1-GE3 Datasheet PDF : 9 Pages
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www.vishay.com
Si4136DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
VDS = 10 V, ID = 15 A
20
-
-
V
-
19
-
mV/°C
-
-6
-
1
-
2.2
V
-
-
± 100
nA
-
-
1
μA
-
-
10
30
-
-
A
- 0.00155 0.00200
- 0.00195 0.00250
-
85
-
S
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 20 A
VDS = 10 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 10 V, RL = 1
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 10 V, RL = 1
ID 10 A, VGEN = 10 V, Rg = 1
-
4560
-
-
1285
-
pF
-
545
-
-
73
110
-
34
50
nC
-
11
-
-
9
-
0.3
1.5
3
-
34
60
-
26
45
-
50
90
-
23
40
ns
-
13
25
-
11
22
-
43
70
-
9
18
Continuous source-drain diode current
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 2 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
7
A
-
-
70
-
0.69
1.1
V
-
31
47
ns
-
24
36
nC
-
15.5
-
ns
-
15.5
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0139-Rev. A, 02-Feb-09
2
Document Number: 64718
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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