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SI4136DY-T1-GE3 Datasheet PDF : 9 Pages
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Si4136DY
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
SO-8 Single
D
D5
D6
D7
8
4
3G
2S
1S
S
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a
Configuration
20
0.0020
0.0025
34
46 a
Single
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• OR-ing
• DC/DC
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SO-8
Si4136DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current
Avalanche energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
20
± 20
46
37
31 b, c
24.7 b, c
70
7
3.1 b, c
30
45
7.8
5
3.5 b, c
2.2 b, c
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
t 10 s
Maximum junction-to-foot (drain)
Steady state
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 80 °C/W
SYMBOL
RthJA
RthJF
TYPICAL
29
13
MAXIMUM
35
16
UNIT
°C/W
S09-0139-Rev. A, 02-Feb-09
1
Document Number: 64718
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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