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SMP50-120(2004) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
SMP50-120
(Rev.:2004)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP50-120 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
SMP50 / SMTPA / TPA
Figure 2: Pulse waveform (10/1000µs)
% I PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr
tp
t
Figure 3: Non repetitive surge peak on-state
current versus overload duration
ITSM(A)
30
25
20
15
10
5
0
1E-2
1E-1
t(s)
1E+0
1E+1
F=50Hz
1E+2
1E+3
Figure 4: On-state voltage versus on-state
current (typical values)
Figure 5: Relative variation of holding current
versus junction temperature
IT(A)
50
20
10
5
Tj=25°C
2
VT(V)
1
0
1
2
3
4
5
6
7
8
9
10
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
Figure 6: Relative variation of breakover
voltage versus junction temperature
VBO[Tj] / VBO[Tj=25°C]
1.10
1.05
1.00 270 V
0.95
62 V
0.90
-40
-20
Tj(°C)
0
20
40
60
80
100
Figure 7: Relative variation of leakage current
versus reverse voltage applied (typical values)
IRM[Tj] / IRM[Tj=25°C]
2000
VR=VRM
1000
100
10
1
25
Tj(°C)
50
75
100
125
4/10

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