SMP50-120(2004) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
SMP50-120 Datasheet PDF : 10 Pages
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SMP50 / SMTPA / TPA
Table 4: Thermal Resistances
Symbol
Parameter
Rth(j-a)
Rth(j-l)
Junction to ambient (with recommended footprint or
with Llead = 10mm for DO-15)
Junction to leads (Llead = 10mm for DO-15)
DO-15
100
60
Value
SMA
120
30
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
SMB
100
20
Unit
°C/W
°C/W
IRM @ VRM IR @ VR
Types
max.
max.
note1
µA V µA V
SMP50-62 / TPA62
SMTPA62
56
62
SMP50-68 / TPA68
SMTPA68
61
68
SMP50-100 / TPA100
SMTPA100
90
100
SMP50-120 / TPA120
SMTPA120
108
120
SMP50-130 / TPA130
SMTPA130
SMP50-180 / TPA180
SMTPA180
117
130
2
5
162
180
SMP50-200 / TPA200
SMTPA200
180
200
SMP50-220 / TPA220
SMTPA220
198
220
SMP50-240 / TPA240
SMTPA240
216
240
SMP50-270 / TPA270
SMTPA270
243
270
Note 1: IR measured at VR guarantee VBR min ≥ VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Dynamic
VBO
max.
note 2
V
Static
VBO @ IBO
max. max.
note 3
V mA
IH
min.
note 4
mA
C
typ.
note 5
pF
85
82
20
93
90
20
135 133
16
160 160
16
173 173
14
800 150
235 240
14
262 267
12
285 293
12
300 320
12
350 360
12
Note 4: see functional holding current test circuit 3
Note 5: VR = 50V bias, VRMS=1V, F=1MHz
Note 6: VR = 2V bias, VRMS=1V, F=1MHz
C
typ.
note 6
pF
40
40
35
30
30
25
25
25
25
25
3/10
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