TGA2511(2005) Ver la hoja de datos (PDF) - TriQuint Semiconductor

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Fabricante

TGA2511
(Rev.:2005)

X-Band Low Noise Amplifier

TriQuint Semiconductor 

Advance Product Information

July 14, 2005

TGA2511

TABLE III

ELECTRICAL CHARACTERISTICS

(Ta = 25 0C Nominal)

PARAMETER

Frequency Range

Drain Voltage, Vd

Drain Current, Id

Gate Voltage, Vg

Small Signal Gain, S21

Input Return Loss, S11

Output Return Loss, S22

Noise Figure, NF

Output Power @ 1dB Gain Compression, P1dB

OIP3

Gate Bias

6 - 14

5.0

160

-0.1

20

18

18

1.3

12

24

Self Bias

6 - 14

5.0

80

-

17

18

18

1.4

6

15

UNITS

GHz

V

mA

V

dB

dB

dB

dB

dBm

dBm

TABLE IV

THERMAL INFORMATION

PARAMETER

TEST CONDITIONS

TJC Thermal Resistance

(channel to Case)

Vd = 5 V

Id = 160 mA Gate Bias

Pdiss = 0.80 W

TJC Thermal Resistance

(channel to Case)

Vd = 5 V

Id = 80 mA Self Bias

Pdiss = 0.40 W

TCH

(OC)

103.9

82.7

TJC

(qC/W)

42.4

31.7

TM

(HRS)

3.8E+6

4.1E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100%

of DC power is dissipated.

3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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