TA2012 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TA2012 Datasheet PDF : 21 Pages
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TA8132AN / AF , TA2012N / F
Electrical characteristics
Unless Otherwise Specified, Ta = 25°C, VCC1 = 3V, SW1→10kΩ, SW3→OFF
FM IF: f = 10.7MHz, ∆f = ±22.5kHz, fm = 1kHz
AM: f = 1MHz, MOD = 30%, fm = 1kHz
MPX: fm = 1kHz
Characteristic
Supply current
Input limiting
voltage
Recovered output
voltage
Signal to noise
ratio
Total harmonic
distortion
AM rejection ratio
LED on sensitivity
IF count
FM output
IF frequency
IF
1 / 8 IF
IF count
output
voltage
IF
1 / 8 IF
IF count output
sensitivity
Symbol
ICC (FM)
ICC (AM)
Vin (lim.)
Test
Cir-
Test Condition
cuit
1 FM mode, Vin = 0
1 AM mode, Vin = 0
1 -3dB limiting point
VOD
1 Vin = 80dBµV EMF
S/N
1 Vin = 80dBµV EMF
THD
AMR
VL
fIF (FM)
f1 / 8 IF (FM)
VIF (FM)
V1 / 8 IF (FM)
IFsens. (FM)
1 Vin = 80dBµV EMF
1 Vin = 80dBµV EMF
1 IL = 1mA
1
Vin = 80dBµV EMF,
SW2→VCC, SW3→ON
1
Vin = 80dBµV EMF,
SW2→GND, SW3→ON
1
Vin = 61dBµV EMF,
SW2→VCC, SW3→ON
1
Vin = 61dBµV EMF,
SW2→GND, SW3→ON
SW1→0, SW2→GND,
SW3→ON
SW1→510Ω, SW2→GND,
1 SW3→ON
SW1→0, SW2→,VCC,
SW3→ON
SW1→510Ω, SW2→,VCC,
SW3→ON
Min. Typ. Max. Unit
―
11.0 14.0
mA
―
10.5 13.5
41
46
51
dBµV
EMF
50
75
100 mVrms
―
65
―
dB
―
0.2
―
%
―
38
―
dB
48
53
58
dBµV
EMF
―
10.7
―
1.3374 1.3375 1.3376
MHz
350 500
350 500
―
mVp-p
―
―
76
―
―
68
―
dBµV
EMF
―
77
―
―
69
―
11
2002-10-30
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