TA2012 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TA2012

Bipolar Linear Integrated Circuit Silicon Monolithic

Toshiba 

Characteristic

Gain

Recovered output

voltage

Signal to noise

ratio

Total harmonic

distortion

LED on sensitivity

Local OSC buff.

AM output voltage

IF count output

voltage

IF count output

sensitivity

Pin(19) output resistance

TA8132AN / AF , TA2012N / F

Symbol

ＧV

VOD

S/N

THD

VL

VOSC (AM)

VIF (AM)

IFsens. (AM)

R19

Test

Cir-

Test Condition

cuit

1 Vin = 26dBµV EMF

1 Vin = 60dBµV EMF

1 Vin = 60dBµV EMF

1 Vin = 60dBµV EMF

1 IL = 1mA

1 fOSC = 1.45MHz

2 fOSC = 27MHz

1 Vin = 39dBµV EMF, SW3→ON

SW1→0, SW2→GND,

SW3→ON

SW1→510Ω, SW2→GND,

1 SW3→ON

SW1→0, SW2→,VCC,

SW3→on

SW1→510Ω, SW2→,VCC,

SW3→ON

FM mode

1

AM mode

Min. Typ. Max. Unit

28

57

85

mVrms

50

75

100

―

41

―

dB

―

1.0

21

26

350 500

―

500

350 500

―

49

―

%

31

dBµV

EMF

―

―

mVp-p

― mVp-p

―

―

42

―

dBµV

EMF

―

49

―

―

42

―

―

0.6

―

kΩ

―

12

―

12

2002-10-30

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