T431616B Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza

componentes Descripción

Fabricante

T431616B

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

AC OPERATING CONDITIONS

(VDD= +2.7 to +3.6V , TA=-10 to +85°C)

Parameter

Input levels (VIH/VIL)

Input timing measurement reference level

Input rise and fall time

Output timing measurement reference level

Output load condition

Value

3.0 / 0

1.4

tr / tf = 1 / 1

1.4

See Fig.2

T431616B

Unit

V

V

ns

V

Output

870 ohm

3.3V

1200 ohm

30pf

VOH(DC)=2.4,IOH=-2mA

VOL(DC)=0.4,IOL=2mA

Output

ZO=50 ohm

Vtt=1.4v

50

ohm

30pf

(Fig.1) DC Output Load Circuit

(Fig.2)AC Output Load Circuit

Taiwan Memory Technology, Inc. reserves the right P. 7

to change products or specifications without notice.

Publication Date: JUL. 2001

Revision:A

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