T431616B Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T431616B

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

SDRAM

T431616B

1M x 16 SDRAM

512K x 16bit x 2Banks Synchronous DRAM

FEATURES

• +2.7 to +3.6V power supply

• Dual banks operation

• LVTTL compatible with multiplexed address

• All inputs are sampled at the positive going edge

of system clock

• Burst Read Single-bit Write operation

• DQM for masking

• Auto refresh and self refresh

• 32ms refresh period (2K cycle)

• MRS cycle with address key programs

- CAS Latency ( 1 & 2 & 3 )

- Burst Length ( 1 , 2 , 4 , 8 & full page)

- Burst Type (Sequential & Interleave)

• Available package type in 50 pin TSOP(II)

and 60-pin CSP

ORDERING INFORMATION

MAX

PART NO. FREQUENCY PACKAGE

T431616B-20S

T431616B-20C

T431616B-10S

T431616B-10C

50 MHz

50 MHz

100 MHz

100 MHz

TSOP-II

CSP

TSOP-II

CSP

GRNERAL DESCRIPTION

The T431616B is 16,777,216 bits synchronous

high data rate Dynamic RAM organized as

2 x 524,288 words by 16 bits , fabricated with high

performance CMOS technology . Synchronous

design allows precise cycle control with the use of

system clock I/O transactions are possible on every

clockcycle . Range of operating frequencies ,

programmable burst length and programmable

latencies allow the same device to be useful for a

variety of high bandwidth , high performance

memory system applications.

Taiwan Memory Technology, Inc. reserves the right P. 1

to change products or specifications without notice.

Publication Date: JUL. 2001

Revision:A

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