T431616B Ver la hoja de datos (PDF) - Taiwan Memory Technology

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componentes Descripción

Fabricante

T431616B

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616B

*note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.

2. Bank active & read/write are controlled by BA.

BA

Active & Read/Write

0

Bank A

1

Bnak B

3. Enable and dis able auto precharge function are controlled by A10/AP in read/wirte command.

A10/AP BA

Operation

0 Disable auto precharge,leave bank A active at end of burst.

0

1 Disable auto precharge,leave bank B active at end of burst.

0 Enable auto precharge, precharge bank A at end of burst.

1

1 Enable auto precharge, precharge bank B at end of burst.

4. A10/AP and BA control bank precharge when precharge command is asserted.

A10/AP BA

00

01

1X

precharge

Bank A

Bank B

Both Banks

Taiwan Memory Technology, Inc. reserves the right P.15

to change products or specifications without notice.

Publication Date: JUL. 2001

Revision:A

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