STPS41H100 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS41H100 Datasheet PDF : 9 Pages
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STPS41H100C
Characteristics
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
PF(av)(W)
16
14
12
δ = 0.1
10
δ = 0.05
8
6
δ = 0.2
δ = 0.5
δ=1
IF(av)(A)
22
20
18
16
14
12
10
8
Rth(j-a)=Rth(j-c)
4
6
T
Rth(j-a)=50°C/W
4
T
2
IF(av)(A)
δ=tp/T
tp
2
δ=tp/T
tp
Tamb(°C)
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM (Tj)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
0.01
0.1
0.2
tp(µs)
Tj(°C)
0
1
10
100
1000
25
50
75
100
125
150
Figure 5.
IM(A)
300
Non repetitive surge peak forward
current versus overload duration
(maximum values)
250
200
150
100
50 IM
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Doc ID 8613 Rev 5
3/9
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