STP10NM60N(2015) Ver la hoja de datos (PDF) - STMicroelectronics

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STP10NM60N
(Rev.:2015)

N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 TO-220FP IPAK DPAK

VGS Gate- source voltage

± 25

ID Drain current (continuous) at TC = 25 °C

10

10 (1)

10

ID Drain current (continuous) at TC = 100 °C

5

5 (1)

5

IDM(2) Drain current (pulsed)

32

32 (1)

32

PTOT Total dissipation at TC = 25 °C

dv/dt(3) Peak diode recovery voltage slope

70

25

70

15

VISO

TJ

Tstg

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t =1 s; TC = 25 °C)

Operating junction temperature

Storage temperature

2500

- 55 to 150

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

V

A

A

A

W

V/ns

V

°C

Symbol

Table 3. Thermal data

Parameter

Value

Unit

TO-220 TO-220FP IPAK DPAK

Rthj-case

Rthj-amb

Rthj-pcb

Thermal resistance junction-case max.

Thermal resistance junction-ambient max.

Thermal resistance junction-pcb max.

1.79

5

62.50

1.79

100

50

°C/W

°C/W

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max.)

4

A

Single pulse avalanche energy

EAS

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

200

mJ

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