STP10NM60N(2015) Ver la hoja de datos (PDF) - STMicroelectronics

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STP10NM60N
(Rev.:2015)

N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 300 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16)

Min. Typ. Max. Unit

-

10

- ns

-

12

- ns

-

32

- ns

-

15

- ns

Table 8. Source-drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 8 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 18)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 18)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Min. Typ. Max. Unit

-

8

A

32

-

1.3 V

- 250

ns

- 2.12

µC

17

A

- 315

ns

2.6

µC

16.5

A

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