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S3C2440X Ver la hoja de datos (PDF) - Samsung

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S3C2440X Datasheet PDF : 429 Pages
First Prev 421 422 423 424 425 426 427 428 429
2003.10.15
ELECTRICAL DATA
S3C2440X RISC MICROPROCESSOR
Table 25-18. USB Full Speed Output Buffer Electrical Characteristics
(VDD = 1.8 V ± 0.15 V, TA = 0 to 70 °C, VEXT = 3.3V ± 0.3V)
Parameter
Symbol
Condition
Driver Characteristics
Transition Time
Rise Time
TR
CL = 50pF
Fall Time
TF
CL = 50pF
Rise/Fall Time Matching
Trfm
(TR / TF )
Output Signal Crossover
Voltage
Vcrs
Drive Output Resistance
Zdrv
Steady state drive
Min
Max
4.0
20
4.0
20
90
111.1
1.3
2.0
28
44
Unit
ns
%
V
ohm
Table 25-19. USB Low Speed Output Buffer Electrical Characteristics
(VDD = 1.8 V ± 0.15 V, TA = 0 to 70 °C, VEXT = 3.3V ± 0.3V)
Parameter
Symbol
Condition
Driver Characteristics
Rising Time
TR
CL = 50pF
CL = 350pF
CL = 50pF
Falling Time
TF
CL = 350pF
Rise/Fall Time Matching
Trfm
(Tr / Tf )
Output Signal Crossover
Voltage
Vcrs
Min
Max
Unit
75
ns
300
75
300
80
125
%
1.3
2.0
V
Note: All measurement conditions are in accordance with the Universal Serial Bus Specification 1.1 Final Draft
Revision.
25-38
Preliminary product information describes products that are in development,
for which full characterization data and associated errata are not yet available
Specifications and information herein are subject to change without notice.

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