RD12MVS1 Ver la hoja de datos (PDF) - Mitsumi
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RD12MVS1 Datasheet PDF : 8 Pages
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< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
-
-
10
uA
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
-
-
1
uA
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8
-
4.4
V
Pout Output Power
D Drain Efficiency
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A
11.5 12
-
W
55 57
-
%
Load VSWR tolerance
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50
Not destroy
-
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
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