RD12MVS1 Ver la hoja de datos (PDF) - Mitsumi
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RD12MVS1 Datasheet PDF : 8 Pages
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< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
C1
Vgg
W
330pF
RF-in
35mm
47pF
L1
3mm 8nH
4.7kOHM
4mm
12mm
Contact
3.5mm
100pF
15pF
C2
C3
Vdd
W
Contact
3.5mm 6.0mm
L2
24.9nH
5.0mm
RD12MV
S1
24pF
33pF
20mm
25mm
RF-OUT
330pF
68pF
Note:Boad material PTFE substrate
Micro strip line width=2.2mm/50、er:2.7、t=0.8mm
W:Line width=1.0mm
Chip Condencer :GRM40
Copper Board spring t=0.1mm
L:Enameled Wire
L1:4Turns、D:0.43mm、φ1.66mm(outside diameter)
L2:6Turns、D:0.43mm、φ2.46mm(outside diameter)
C1、C2:1000ｐF
C3: 10μF、50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
f=175MHz Zout*
f=175MHz Zin*
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
Publication Date : Oct．2011
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